The ETP Silicon Laboratory houses several measurement setups for the characterization of semiconductor structures specifically with regard to the effects of radiation damage like those suffered by the components in a collision experiment such as CMS:
- Probe stations for the general characterization of semicunductor structures such as diodes, MOS structures, strip sensors. The stations offer space for structures up to a size of 8" wafers. The sample temperature is controlled in the range of -20°C (CMS operating temperature and current reduction after irradiation) to +60°C (annealing studies). [IEKP-KA/2009-27]
- A sensitive IR camera is used to detect electroluminescence light.
- Readout systems for strip sensors based on the ALiBaVa system. Here, too, the built-in sensors can be cooled or heated. A movable, focused IR laser and a Sr90 source are available for generating charge carriers. [IEKP-KA/2012-21]
In addition, we also operte readout systems with the new binary readout chip of the CMS track detector (CDC). [ETP-KA/2018-17]